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英國Ossila氧化硅基板晶片S146

供應(yīng)數(shù)量：	1664
發(fā)布日期：	2025/10/4
有效日期：	2026/4/4
原產(chǎn) 地：	英國
已獲點擊：	1664
產(chǎn)品報價：

[詳細資料]

只用于動物實驗研究等

Silicon substrates designed for use in organic electronics labs as FET substrates, and other applications including X-ray studies, surface microscopy analysis and elipsometry measurements. Sold on 200 mm wafer mounts pre-oxidised and pre-diced to our standardised substrate size of 15 mm x 20 mm, which fits in our substrate rack and makes batch cleaning and processing much faster and simpler.

Please note that the current batch of wafers do not have a protective photoresist coating. With constant product development and improvement and for consistency and stability over long periods of time, we have had the latest batch produced without the photoresist. If you have any queries or concerns about this then please get in touch with the Ossila office as we will be happy to advise you.

Product code	Oxide (nm)	Dicing	Resistivity (Ω cm)	Usage
S146	300	Diced	0.0005 to 0.001	OFETs with a robust electro-mechanical gate insulator (suitable for use with gold electrode evaporations)
S147	400	Diced		X-ray measurements, microscopy and ellipsometry

Datasheet

Individual silicon oxide substrate (300 nm oxide).

Silicon oxide substrates wafer - 8 inch (200 mm) diameter Wafer of diced silicon substrates (300 nm oxide).

Wafer Specifications

Wafer diameter	200 mm (8")
Oxide thickness tolerance	+/- 5% (both sides)
Oxide growth	Thermally grown (dry) on both sides
Wafer type / dopant	P / Boron
Wafer thickness	725 +/- 25 µm
Wafer growth	Czochralski (CZ)
Orientation	<1 0 0>
Front surface	Polished
Back surface	Etched

Dicing Specifications

Substrate size	20 mm x 15 mm
Substrates per wafer	Approx. 75 complete substrates (plus partial edge pieces)
Wafer protection	None

Cleaning routine

As with all organic electronic devices, getting a clean substrate is essential for high performance. Our pre-diced substrates make batch cleaning easier by use of a substrate rack. These wafers can be cleaned with the following routine:

5 mins sonication in 1% (v/v) Hellmanex solution
2x dump rinse in hot water
5 mins sonication in IPA
2x dump rinse in deionised water
N2 blow dry

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英國Ossila氧化硅基板晶片S146

Datasheet

Wafer Specifications

Dicing Specifications

Cleaning routine

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